A CMOS-Compatible, Low-Loss, and Low-Crosstalk Silicon Waveguide Crossing

We demonstrated a waveguide crossing for submicron silicon waveguides with average insertion loss of 0.18±0.03 dB and crosstalk of -41±2 dB, uniform across an 8-inch wafer. The device was fabricated in a CMOS-compatible process using 248 nm lithography, with only one patterning step.


Publié dans:
IEEE Photonics Technology Letters, 25, 5, 422-425
Année
2013
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
1941-0174
Laboratoires:




 Notice créée le 2017-12-01, modifiée le 2018-12-03


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