000232632 001__ 232632
000232632 005__ 20181203024903.0
000232632 0247_ $$2doi$$a10.1109/LPT.2013.2241049
000232632 022__ $$a1941-0174
000232632 037__ $$aARTICLE
000232632 245__ $$aA CMOS-Compatible, Low-Loss, and Low-Crosstalk Silicon Waveguide Crossing
000232632 260__ $$bInstitute of Electrical and Electronics Engineers$$c2013
000232632 269__ $$a2013
000232632 336__ $$aJournal Articles
000232632 520__ $$aWe demonstrated a waveguide crossing for submicron silicon waveguides with average insertion loss of 0.18±0.03 dB and crosstalk of -41±2 dB, uniform across an 8-inch wafer. The device was fabricated in a CMOS-compatible process using 248 nm lithography, with only one patterning step.
000232632 700__ $$aZhang, Yi
000232632 700__ $$aYang, Shuyu
000232632 700__ $$aLim, Andy Eu-Jin
000232632 700__ $$aLo, Guo-Qiang
000232632 700__ $$0247423$$g172230$$aGalland, Christophe
000232632 700__ $$aBaehr-Jones, Tom
000232632 700__ $$aHochberg, Michael
000232632 773__ $$j25$$tIEEE Photonics Technology Letters$$k5$$q422-425
000232632 909C0 $$xU13462$$0252619$$pLQNO
000232632 909CO $$pSB$$particle$$ooai:infoscience.tind.io:232632
000232632 917Z8 $$x173008
000232632 937__ $$aEPFL-ARTICLE-232632
000232632 973__ $$rREVIEWED$$sPUBLISHED$$aOTHER
000232632 980__ $$aARTICLE