000231925 001__ 231925
000231925 005__ 20190812210003.0
000231925 0247_ $$2doi$$a10.1109/ESSDERC.2017.8066634
000231925 037__ $$aCONF
000231925 245__ $$aShunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications
000231925 269__ $$a2017
000231925 260__ $$bIEEE$$c2017
000231925 336__ $$aConference Papers
000231925 700__ $$aCasu, E. A.
000231925 700__ $$aVitale, W. A.
000231925 700__ $$aTamagnone, M.
000231925 700__ $$aLopez, M. Maqueda
000231925 700__ $$aOliva, N.
000231925 700__ $$0249555$$g249462$$aKrammer, A.
000231925 700__ $$0241357$$g146273$$aSchuler, A.
000231925 700__ $$aFernandez-Bolanos, M.
000231925 700__ $$0241430$$g122431$$aIonescu, A.M.
000231925 7112_ $$d11-14 September 2017$$cLeuven, Belgium$$aESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC)
000231925 773__ $$t2017 47th European Solid-State Device Research Conference (ESSDERC)$$q232-235
000231925 8564_ $$zPreprint$$yPreprint$$uhttps://infoscience.epfl.ch/record/231925/files/PID4873563.pdf$$s1200139
000231925 909C0 $$xU10328$$pNANOLAB$$0252177
000231925 909C0 $$pLESO-PB$$0252072$$xU10262
000231925 909CO $$qGLOBAL_SET$$pconf$$pSTI$$pENAC$$ooai:infoscience.tind.io:231925
000231925 917Z8 $$x213975
000231925 937__ $$aEPFL-CONF-231925
000231925 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000231925 980__ $$aCONF