000231583 001__ 231583
000231583 005__ 20180317093402.0
000231583 0247_ $$2doi$$a10.1021/acs.nanolett.7b01817
000231583 022__ $$a1530-6984
000231583 02470 $$2ISI$$a000411043500027
000231583 037__ $$aARTICLE
000231583 245__ $$avan der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices
000231583 260__ $$aWashington$$bAmer Chemical Soc$$c2017
000231583 269__ $$a2017
000231583 300__ $$a7
000231583 336__ $$aJournal Articles
000231583 520__ $$aBecause of the chemical inertness of two dimensional (2D) hexagonal-boron nitride (h-BN), few atomic-layer hBN is often used to encapsulate air-sensitive 2D crystals such as black phosphorus (BP). However, the effects of h-BN on Schottky barrier height, doping, and contact resistance are not well-known. Here, we investigate these effects by fabricating h-BN encapsulated BP transistors with cobalt (Co) contacts. In sharp contrast to directly Co contacted p-type BP devices, we observe strong n-type conduction upon insertion of the h-BN at the Co/BP interface. First-principles calculations show that this difference arises from the much larger interface dipole at the Co/h-BN interface compared to the Co/BP interface, which reduces the work function of the Co/h-BN contact. The Co/h-BN contacts exhibit low contact resistances (similar to 4.5 k Omega) and are Schottky barrier-free. This allows us to probe high electron mobilities (4,200 cm(2)/(Vs)) and observe insulator metal transitions even under two-terminal measurement geometry.
000231583 6531_ $$aWork-function
000231583 6531_ $$atunnel barrier
000231583 6531_ $$aboron nitride
000231583 6531_ $$ablack phosphorus
000231583 6531_ $$aencapsulation
000231583 700__ $$aAvsar, Ahmet$$uNatl Univ Singapore, Ctr Adv Mat 2D, Singapore 117542, Singapore
000231583 700__ $$aTan, Jun Y.$$uNatl Univ Singapore, Ctr Adv Mat 2D, Singapore 117542, Singapore
000231583 700__ $$aLuo, Xin$$uNatl Univ Singapore, Ctr Adv Mat 2D, Singapore 117542, Singapore
000231583 700__ $$aKhoo, Khoong Hong$$uInst High Performance Comp, 1 Fusionopolis Way,16-16 Connexis, Singapore 138632, Singapore
000231583 700__ $$aYeo, Yuting$$uNatl Univ Singapore, Ctr Adv Mat 2D, Singapore 117542, Singapore
000231583 700__ $$aWatanabe, Kenji
000231583 700__ $$aTaniguchi, Takashi
000231583 700__ $$aQuek, Su Ying$$uNatl Univ Singapore, Ctr Adv Mat 2D, Singapore 117542, Singapore
000231583 700__ $$aOzyilmaz, Barbaros$$uNatl Univ Singapore, Ctr Adv Mat 2D, Singapore 117542, Singapore
000231583 773__ $$j17$$k9$$q5361-5367$$tNano Letters
000231583 909CO $$ooai:infoscience.tind.io:231583$$particle$$pSTI
000231583 909C0 $$0252445$$pIEL$$xU10318
000231583 917Z8 $$x148230
000231583 937__ $$aEPFL-ARTICLE-231583
000231583 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000231583 980__ $$aARTICLE