Elevated transition temperature in Ge doped VO2 thin films

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (similar to 95 degrees C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications-where higher critical temperatures than 68 degrees C of pristine VO2 are needed-a viable and promising solution. Published by AIP Publishing.

Published in:
Journal Of Applied Physics, 122, 4, 045304
Melville, American Institute of Physics

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 Record created 2017-10-09, last modified 2018-03-17

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