High performance amorphous Zn-Sn-O: impact of composition, microstructure, and thermal treatments in the optoelectronic properties

Zinc and tin oxides are both earth-abundant materials with demonstrated applicability as electrodes in several optoelectronic devices. The presence of grain boundaries in these polycrystalline films generally limits the electron mobility. By a combinatorial study of ZnO and SnO2, a transparent conducting amorphous zinc tin oxide (ZTO) electrode, free of grain boundaries, with a dense (void-free) microstructure has been developed. We show how tuning the stoichiometry (Zn4.5Sn30.2O65.3) and film's microstructure during sputtering deposition, allows achieving electron mobilities up to 25 cm(2)/Vs and free carrier concentrations of similar to 7 x 10(19) cm(-3). The effects of post-deposition thermal treatments are furthermore studied. The ZTO films keep their dense amorphous microstructure upon annealing up to 500 degrees C, as confirmed by cross-section TEM and XRD, while presenting a clear improvement in electron mobility up to 35 cm(2)/Vs when annealed in oxygen-rich atmospheres.


Editor(s):
Teherani, Fh
Look, Dc
Rogers, Dj
Bozovic, I
Published in:
Oxide-Based Materials And Devices Viii, 10105, UNSP 101050D
Presented at:
8th Conference on Oxide-Based Materials and Devices VIII, San Francisco, CA, JAN 29-FEB 01, 2017
Year:
2017
Publisher:
Bellingham, Spie-Int Soc Optical Engineering
ISSN:
0277-786X
ISBN:
978-1-5106-0651-7
978-1-5106-0652-4
Keywords:
Laboratories:




 Record created 2017-09-05, last modified 2018-09-13


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