000229114 001__ 229114
000229114 005__ 20180317092338.0
000229114 013__ $$aUS6172902$$bUS$$cB1$$d20010109
000229114 02470 $$2EPO Family ID$$a11004741
000229114 02470 $$2TTO$$a6.0085
000229114 037__ $$aPATENT
000229114 245__ $$aNon-volatile magnetic random access memory
000229114 269__ $$a2001
000229114 260__ $$c2001
000229114 336__ $$aPatents
000229114 520__ $$aA non-volatile random access memory (NVRAM) of the type with magnetoresistive memory elements (1) connected by sets of non-intersecting conductor sense lines (3, 4) which define the address of each memory element (1) and are connectable to a magnetic write/read recording unit. The memory elements are a plurality of magnetoresistive submicron dots or wires (1) embedded in a membrane (2) through which the submicron dots or wires extend. The sets of non-intersecting conductor sense lines (3, 4) are connected to the opposite ends of the submicron dots or wires (1) on opposite sides of the membrane. Each magnetoresistive submicron dot or wire (1) is composed of ferromagnetic material or a combination of ferromagnetic and non-ferromagnetic materials having at least two magnetic states ("0"; "1"), writeable by passing at an appropriate external field a writing current pulse (iw) in its conductor lines (3, 4, 5) sufficient to switch its magnetic states and readable by passing a an AC or DC current (ir) in its conductor lines below the level for switching its magnetic states.
000229114 700__ $$aWegrowe, Jean-Eric
000229114 700__ $$aAnsermet, Jean-Philippe
000229114 700__ $$aGilbert, Scott E
000229114 909C0 $$0252085$$pTTO$$xU10021
000229114 937__ $$aEPFL-PATENT-229114
000229114 973__ $$aEPFL
000229114 980__ $$aPATENT