Semiconductor device and DRAM

Data storage cells are formed on a substrate (13). Each of the data storage cells includes a field effect transistor with a source (18), drain (22) and gate (28) and a body arranged between the source and drain for storing electrical charge generated in the body. The magnitude of the net electrical charge in the body can be adjusted by input signals applied to the transistor and adjustment prevented by applying a voltage between the gate and drain and the source and the drain. An Independent claim is included for a method of storing data in a semiconductor device


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