Method of driving a semiconductor device

Data storage cells are formed on a substrate (13). Each of the data storage cells includes a field effect transistor with a source (18), drain (22) and gate (28) and a body arranged between the source and drain for storing electrical charge generated in the body. The magnitude of the net electrical charge in the body can be adjusted by input signals applied to the transistor and adjustment prevented by applying a voltage between the gate and drain and the source and the drain. An Independent claim is included for a method of storing data in a semiconductor device

Other identifiers:
EPO Family ID: 27224405
EPO Family ID: 8183972
EPO Family ID: 27838204
EPO Family ID: 28459620
TTO: 6.0271

 Record created 2017-06-13, last modified 2018-03-17

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