000229083 001__ 229083
000229083 005__ 20180913064357.0
000229083 013__ $$aEP1271658$$bEP$$cA1$$d20030102
000229083 02470 $$2EPO Family ID$$a8174973
000229083 02470 $$2TTO$$a6.0214
000229083 037__ $$aPATENT
000229083 245__ $$aFerroelectric film capacitor structure with selective doping
000229083 260__ $$c2003
000229083 269__ $$a2003
000229083 336__ $$aPatents
000229083 520__ $$aA ferroelectric film capacitor structure (FeCAP), in particular for memory applications, comprises a layer of doped ferroelectric material between facing electrodes having a varying/asymmetric doping profile, the concentration of the dopant in the ferroelectric material varying as a function of the distance from the electrodes. The ferroelectric material can be in particular a perovskite such as (Pb) (Zr,Ti)03 (PZT) and the dopant can be selected from Nb, Ta, La, Sr, Ca or their combinations. Advantageously, the concentration of dopant decreases near one or both interfaces of the ferroelectric material with the electrodes, the concentration of dopant, as a function of the distance from the electrodes, being typically up to 15% by weight of the ferroelectric material.
000229083 700__ $$aStolitchnov, Igor
000229083 700__ $$0240630$$aTagantsev, Alexander$$g106518
000229083 909C0 $$0252085$$pTTO$$xU10021
000229083 909C0 $$0252012$$pLC$$xU10334
000229083 909CO $$ooai:infoscience.tind.io:229083$$pSTI
000229083 937__ $$aEPFL-PATENT-229083
000229083 973__ $$aEPFL
000229083 980__ $$aPATENT