Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices
2007
Abstract
A method for including an oxide region in a layered structure being grown epitaxially on a substrate, comprising the steps of epitaxially forming a Group III-nitride precursor layer, and selectively oxidizing the precursor layer, thereby forming the oxide region.
Details
Title
Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices
Author(s)
Buehlmann, Hans-joerg ; Dorsaz, Julien ; Carlin, Jean-francois
Date
2007
Keywords
Note
Alternative title(s) :
(fr) Oxydation selective et gravure selective de couches de allnn pour fabrication de dispositifs semi-conducteurs au nitrure du groupe iii
Other identifier(s)
EPO Family ID: 36602113
Patent number(s)
WO2006066962 (A3)
WO2006066962 (A2)
WO2006066962 (A2)
Laboratories
TTO
Record Appears in
Scientific production and competences > Non-academic units > TTO - Technology Transfer Office
Work produced at EPFL
Patents
Work produced at EPFL
Patents
Record creation date
2017-06-13