A method for including an oxide region in a layered structure being grown epitaxially on a substrate, comprising the steps of epitaxially forming a Group III-nitride precursor layer, and selectively oxidizing the precursor layer, thereby forming the oxide region.
Title
Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices
Date
2007
Note
Alternative title(s) :
(fr) Oxydation selective et gravure selective de couches de allnn pour fabrication de dispositifs semi-conducteurs au nitrure du groupe iii
Other identifier(s)
EPO Family ID: 36602113
Record creation date
2017-06-13