Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices

A method for including an oxide region in a layered structure being grown epitaxially on a substrate, comprising the steps of epitaxially forming a Group III-nitride precursor layer, and selectively oxidizing the precursor layer, thereby forming the oxide region.


Year:
2007
Other identifiers:
EPO Family ID: 36602113
TTO: 6.0532
Laboratories:




 Record created 2017-06-13, last modified 2018-01-27


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