Group iii nitride light-emitting devices having a polarization-doped region
2006
Abstract
A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitride region which is compositionally graded for polarization doping.
Details
Title
Group iii nitride light-emitting devices having a polarization-doped region
Author(s)
Carlin, Jean-francois
Date
2006
Keywords
Note
Alternative title(s) :
(fr) Dispositifs electroluminescents a base de nitrures du groupe iii presentant une region dopee par polarisation
Other identifier(s)
EPO Family ID: 35871060
Patent number(s)
WO2006074916 (A1)
Laboratories
TTO
Record Appears in
Scientific production and competences > Non-academic units > TTO - Technology Transfer Office
Work produced at EPFL
Patents
Work produced at EPFL
Patents
Record creation date
2017-06-13