Group iii nitride light-emitting devices having a polarization-doped region
Carlin, Jean-francois
2006

Abstract

A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitride region which is compositionally graded for polarization doping.

Details

Title Group iii nitride light-emitting devices having a polarization-doped region
Author(s) Carlin, Jean-francois
Date 2006
Keywords
Note Alternative title(s) : (fr) Dispositifs electroluminescents a base de nitrures du groupe iii presentant une region dopee par polarisation
Other identifier(s) EPO Family ID: 35871060
Patent number(s) WO2006074916 (A1)
Laboratories TTO
Record Appears in Scientific production and competences > Non-academic units > TTO - Technology Transfer Office
Work produced at EPFL
Patents
Record creation date 2017-06-13