Group iii nitride light-emitting devices having a polarization-doped region

A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitride region which is compositionally graded for polarization doping.


Year:
2006
Other identifiers:
EPO Family ID: 35871060
TTO: 6.0507
Patent number(s):
Laboratories:




 Record created 2017-06-13, last modified 2018-03-17


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