Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)
Moselund, Kirsten; Ionescu, Mihai Adrian; Pott, Vincent; Kayal, Maher
2009

Abstract

The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt current switching.

Details

Title Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)
Author(s) Moselund, Kirsten ; Ionescu, Mihai Adrian ; Pott, Vincent ; Kayal, Maher
Date 2009
Keywords
Note Alternative title(s) : (en) Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (pi-mos)
Other identifier(s) EPO Family ID: 40453509
Patent number(s) US2009072279 (A1)
Laboratories TTO
ELAB
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > ELAB - Electronics Laboratory
Scientific production and competences > Non-academic units > TTO - Technology Transfer Office
Work produced at EPFL
Patents
Record creation date 2017-06-13

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