Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt current switching.


Year:
2009
Other identifiers:
EPO Family ID: 40453509
TTO: 6.0776
Patent number(s):
Laboratories:




 Record created 2017-06-13, last modified 2018-09-13


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