Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)
2009
Abstract
The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt current switching.
Details
Title
Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)
Author(s)
Moselund, Kirsten ; Ionescu, Mihai Adrian ; Pott, Vincent ; Kayal, Maher
Date
2009
Keywords
Note
Alternative title(s) :
(en) Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (pi-mos)
Other identifier(s)
EPO Family ID: 40453509
Patent number(s)
US2009072279 (A1)
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > ELAB - Electronics Laboratory
Scientific production and competences > Non-academic units > TTO - Technology Transfer Office
Work produced at EPFL
Patents
Scientific production and competences > Non-academic units > TTO - Technology Transfer Office
Work produced at EPFL
Patents
Record creation date
2017-06-13