Single photon detector and associated methods for making the same
Richardson, Justin; Grant, Lindsay; Gersbach, Marek; Charbon, Edoardo; Niclass, Christiano; Henderson, Robert; Niclass, Cristiano
2010

Résumé

A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.

Détails

Titre Single photon detector and associated methods for making the same
Auteur(s) Richardson, Justin ; Grant, Lindsay ; Gersbach, Marek ; Charbon, Edoardo ; Niclass, Christiano ; Henderson, Robert ; Niclass, Cristiano
Date 2010
Autres identifiant(s) EPO Family ID: 42221995
Numéro(s) de brevet US7898001 (B2)
US2010133636 (A1)
Laboratoires TTO
Le document apparaît dans Production scientifique et compétences > Unités non-académiques > TTO - Office de transfert de technologies
Travail produit à l'EPFL
Brevets
Date de création de la notice 2017-06-13

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