Impact of organic overlayers on a-Si:H/c-Si surface potential

Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance. Published by AIP Publishing.


Published in:
Applied Physics Letters, 110, 15, 151601
Year:
2017
Publisher:
Melville, American Institute of Physics
ISSN:
0003-6951
Note:
IMT Number : 855
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2017-05-30, last modified 2018-03-17

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