Method to fabricate finfet sensors, in particular, finfet sensors for ionic, chemical and biological applications on si-bulk
The present invention relates to a method of producing a FinFET sensor device comprising the steps of: providing a silicon substrate; etching the silicon substrate to produce at least one upwardly extending Fin structure externally protruding from a surface of the silicon substrate; depositing a spacer layer on the at least one Fin structure; anisotropically etching a section of the spacer layer to expose the underlying silicon; isotropic etching of the exposed silicon surrounding the at least one Fin structure; and carrying out oxidation of the silicon surrounding the at least one Fin structure to produce a Fin structure of silicon inside the at least one Fin structure. The present invention also relates to FinFET sensor devices produced by the above method.
54141856
TTO:6.1375
Patent number | Country code | Kind code | Date issued |
US9570288 | US | B2 | 2017-02-14 |
US2015268189 | US | A1 | 2015-09-24 |