000227861 001__ 227861
000227861 005__ 20181203024651.0
000227861 0247_ $$2doi$$a10.1088/1748-0221/12/02/C02003
000227861 022__ $$a1748-0221
000227861 02470 $$2ISI$$a000397825800003
000227861 037__ $$aARTICLE
000227861 245__ $$aTotal Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad
000227861 260__ $$aBristol$$bIop Publishing Ltd$$c2017
000227861 269__ $$a2017
000227861 300__ $$a9
000227861 336__ $$aJournal Articles
000227861 520__ $$aThis paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. For nMOSFETs, the leakage current shows an increase of 2-3 orders of magnitude, while only moderate degradation for other parameters has been observed. For pMOSFETs, a more severe degradation of parameters has been measured, especially in the drain current. This work is relevant as the evaluation of a new generation of CMOS technologies to be used in future HEP experiments.
000227861 6531_ $$aRadiation-hard electronics
000227861 6531_ $$aFront-end electronics for detector readout
000227861 700__ $$aMattiazzo, S.$$uUniv Padua, Dipartimento Ingn Informaz, Via G Gradenigo 6, I-35131 Padua, Italy
000227861 700__ $$aBagatin, M.$$uUniv Padua, Dipartimento Ingn Informaz, Via G Gradenigo 6, I-35131 Padua, Italy
000227861 700__ $$aBisello, D.$$uUniv Padua, Dipartimento Fis & Astron, Via F Marzolo 8, I-35131 Padua, Italy
000227861 700__ $$aGerardin, S.$$uUniv Padua, Dipartimento Ingn Informaz, Via G Gradenigo 6, I-35131 Padua, Italy
000227861 700__ $$aMarchioro, A.$$uCERN, CH-1211 Geneva 23, Switzerland
000227861 700__ $$aPaccagnella, A.$$uUniv Padua, Dipartimento Ingn Informaz, Via G Gradenigo 6, I-35131 Padua, Italy
000227861 700__ $$aPantano, D.$$uUniv Padua, Dipartimento Fis & Astron, Via F Marzolo 8, I-35131 Padua, Italy
000227861 700__ $$aPezzotta, A.$$uUniv Milano Bicocca, Dipartimento Fis, Piazza Sci 3, I-20126 Milan, Italy
000227861 700__ $$aZhang, C-M.
000227861 700__ $$aBaschirotto, A.$$uUniv Milano Bicocca, Dipartimento Fis, Piazza Sci 3, I-20126 Milan, Italy
000227861 773__ $$j12$$qC02003$$tJournal Of Instrumentation
000227861 909C0 $$0252447$$pIMT$$xU10343
000227861 909CO $$ooai:infoscience.tind.io:227861$$pSTI$$particle
000227861 937__ $$aEPFL-ARTICLE-227861
000227861 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000227861 980__ $$aARTICLE