A salient characteristic of solar cells is their ability to subject photo-generated electrons and holes to pathways of asymmetrical conductivity-'assisting' them towards their respective contacts. All commercially available crystalline silicon (c-Si) solar cells achieve this by making use of doping in either near-surface regions or overlying silicon-based films. Despite being commonplace, this approach is hindered by several optoelectronic losses and technological limitations specific to doped silicon. A progressive approach to circumvent these issues involves the replacement of doped-silicon contacts with alternative materials which can also form 'carrier-selective' interfaces on c-Si. Here we successfully develop and implement dopant-free electron and hole carrier-selective heterocontacts using alkali metal fluorides and metal oxides, respectively, in combination with passivating intrinsic amorphous silicon interlayers, resulting in power conversion efficiencies approaching 20%. Furthermore, the simplified architectures inherent to this approach allow cell fabrication in only seven low-temperature (<= 200 degrees C), lithography-free steps. This is a marked improvement on conventional doped-silicon high-efficiency processes, and highlights potential improvements on both sides of the cost-to-performance ratio for c-Si photovoltaics.