000226195 001__ 226195
000226195 005__ 20181203024606.0
000226195 0247_ $$2doi$$a10.1109/TED.2017.2665527
000226195 022__ $$a1557-9646
000226195 02470 $$2ISI$$a000398818400005
000226195 037__ $$aARTICLE
000226195 245__ $$aBenchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions
000226195 260__ $$bInstitute of Electrical and Electronics Engineers$$c2017$$aPiscataway
000226195 269__ $$a2017
000226195 300__ $$a8
000226195 336__ $$aJournal Articles
000226195 520__ $$aThis paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both I-V and G-V characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear onset of the output characteristics, and the temperature dependence. Experimental calibration on long channel (350 nm) complementary n- and p-type sSi NW TFETs has been performed to create the model, which is used to systematically benchmark the main analog figures of merit at device level: g(m)/I-d, g(m)/g(ds), f(T) and f(T)/IdVd, and their temperature dependence from 25 degrees C to 125 degrees C. This allows for a direct comparison between 28-nm low-power Fully Depleted Silicon on Insulator (FD-SOI) CMOS node and 28-nm double-gate (DG) TFET. We demonstrate unique advantages of sSi DG TFET over CMOS, in terms of: 1) reduced temperature dependence of subthreshold swing; 2) higher transconductance per unit of current with peaks close to 40 V-1, for currents lower than 10 nA/mu m; and 3) higher unity gain frequency per unit power for currents below 10 nA/mu m.
000226195 6531_ $$aBenchmarking
000226195 6531_ $$acompact model
000226195 6531_ $$astrained-Si (sSi) nanowire (NW) tunnel FET (TFET)
000226195 6531_ $$aTFET
000226195 700__ $$0244769$$g198278$$aBiswas, Arnab
000226195 700__ $$aLuong, Gia Vinh
000226195 700__ $$aChowdhury, M. Foysol
000226195 700__ $$0246495$$g200191$$aAlper, Cem
000226195 700__ $$aZhao, Qing-Tai
000226195 700__ $$aUdrea, Florin
000226195 700__ $$aMantl, Siegfried
000226195 700__ $$0241430$$g122431$$aIonescu, Adrian M.
000226195 773__ $$tIEEE Transactions on Electron Devices$$q1-8
000226195 909C0 $$xU10328$$0252177$$pNANOLAB
000226195 909CO $$pSTI$$particle$$ooai:infoscience.tind.io:226195
000226195 917Z8 $$x213975
000226195 937__ $$aEPFL-ARTICLE-226195
000226195 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000226195 980__ $$aARTICLE