Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

In this paper we report the first hybrid Phase-Change - Tunnel FET (PC-TFET) device configurations for achieving a deep sub-thermionic steep subthreshold swing at room temperature and subthreshold power savings. The proposed hybrid device feedbacks the steep transition of Metal-Insulator transition in a VO2 structure into Gate or Source configurations of strained silicon nanowire Tunnel FETs, to achieve a switching with lon/Ioff better that 5.5×106 and with a subthreshold swing of 4.0 mV/dec at 25 °C. We demonstrate that the principle of PC-TFET switching relates to an internal amplification resulting in a sub-unity body factor, m, which is reduced to values below 0.1 for a current range larger than 2-3 decades. We report a full experimental digital and analog benchmarking of the new device and compare it with Tunnel FETs and CMOS. Remarkably, the PC-TFET can achieve analog figures of merit like gm/Id breaking the 40 V-1 limit of MOSFETs. We demonstrate and report the first buffered oscillator cell for neuromorphic computing exploiting the gate configuration of PC-TFET.


Published in:
2016 IEEE International Electron Devices Meeting (IEDM), 19.3.1-19.3.4
Presented at:
2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 3-7 December 2016
Year:
2016
Publisher:
IEEE
Laboratories:




 Record created 2017-02-28, last modified 2018-09-13


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