Operation regimes and electrical transport of steep slope Schottky Si-FinFETS

In the quest for energy efficient circuits, considerable focus has been given to steep slope and polarity-controllable devices, targeting low supply voltages and reduction of transistor count. The recently proposed concept of the three-independent gated Si-FinFETs with Schottky-barriers (SBs) has proven to bring both functionalities even in a single device. However, the complex combination of transport properties including Schottky emission and weak impact ionization as well as the body effect makes the design of such devices challenging. In this work, we perform a deep electrical characterization analysis to visualize and decouple the different operation regimes and electrical properties of the SB Si-FinFETs using a graphical transport map. From these, we give important guidelines for the design of future devices.


Published in:
Journal of Applied Physics, 121, 6
Year:
Feb 10 2017
ISSN:
0021-8979
Laboratories:




 Record created 2017-01-31, last modified 2018-12-03

n/a:
Download fulltext
PDF

Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)