Control of Resistive Switching in Mott Memories Based on TiN/AM4Q8/TiN MIM Devices

The family of AM<sub>4</sub>Q<sub>8</sub> chalcogenide Mott insulators gained attention in recent years for its application opportunities. Here, we explore and validate the resistive switching mechanism of thin-film of GaV<sub>4</sub>S<sub>8</sub> sandwiched between TiN electrodes. The device is fabricated via processes and materials compatible with microelectronics standards and demonstrates a good control and endurance of the non-volatile transitions over a large range of resistance. The achieved multi-level property enables to envision application as <i>Resistive Random Access Memories</i> (RRAM) or neuromorphic applications. We also showed the important role of the current compliance in the control of the transitions.


Published in:
ECS Transactions, 75, 32, 3-12
Year:
2017
Publisher:
Electrochemical Society
ISSN:
1938-5862
Laboratories:




 Record created 2016-11-01, last modified 2018-12-03


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