Field-enhanced design of steep-slope VO2 switches for low actuation voltage

The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a field-enhanced design of 2-terminal VO2 switches that allows decreasing their actuation voltage without affecting their performance and reliability. Exploiting this design, we characterized VO2 switches with extremely abrupt transitions (< 1 mV/dec) until 60 degrees C and a reduction in actuation voltage up to 38.3% with respect to conventional devices.


Published in:
2016 46th European Solid-State Device Research Conference (ESSDERC), 352-355
Presented at:
ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016
Year:
2016
Publisher:
New York, IEEE
ISBN:
978-1-5090-2969-3
Keywords:
Laboratories:




 Record created 2016-10-24, last modified 2018-03-18


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