W-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

We demonstrate W-band monolithic microwave integrated circuit (MMIC) amplifiers based on AlInN/GaN high electron mobility transistors (HEMTs) grown on Silicon. Our MMIC process was fully characterized to 110 GHz and a design kit generated to enable circuit design. A fabricated two-stage amplifier with an output device width of 100 mu m shows a saturated output power of 18.3 dBm and a gain of 8.2 dB at 94 GHz with input/output return losses of -10 dB or better from 90 to 100 GHz. A model confirmed by experimental data revealed that the performance is limited by current collapse and that a doubling of output power could be possible by resolving collapse limitations, showing the considerable potential of GaN-on-Si HEMT technology for low-cost millimeter-wave power electronic applications.


Published in:
Ieee Electron Device Letters, 37, 8, 1025-1028
Year:
2016
Publisher:
Piscataway, Ieee-Inst Electrical Electronics Engineers Inc
ISSN:
0741-3106
Keywords:
Laboratories:




 Record created 2016-10-18, last modified 2018-09-13


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