In situ photoelectron spectroscopic characterization of reactively sputtered, doped vanadium oxide thin films

Thin films of pure vanadium oxide (VOx) and Ge doped vanadium oxide (VOx:Ge) have been deposited by reactive magnetron sputtering on Si (100) substrates. These films were characterized by means of in situ X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy to address the doping induced changes in the core-level and valence-band spectra of the material. Doped films exhibit a decrease in the density of states at the Fermi level, indicating the insulating character of said films compared with the undoped ones. Doped vanadium dioxide is a promising candidate for switchable absorber coatings for solar thermal collectors. Copyright (c) 2016 John Wiley & Sons, Ltd.


Publié dans:
Surface And Interface Analysis, 48, 7, 440-444
Présenté à:
16th European Conference on Applications of Surface and Interface Analysis (ECASIA)
Année
2016
Publisher:
Hoboken, Wiley-Blackwell
ISSN:
0142-2421
Mots-clefs:
Laboratoires:




 Notice créée le 2016-10-18, modifiée le 2019-12-05


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