Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices

We build sub-20 nm gaps in hydrogen silsesquioxane (HSQ) by electron beam lithography, to enable nano-template structures for selective epitaxial growth of Ge or III-V semiconductors for ultra-scaled electronic applications [1]. Gaps of this order have been achieved using more complex methods such as processes based on shallow trench isolation (STI) structures [2].


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