Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K
2016
Details
Title
Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K
Author(s)
Biswas, Arnab ; Tomar, Saurabh ; Ionescu, Adrian M.
Published in
2016 74th Annual Device Research Conference (DRC)
Pagination
2
Pages
1-2
Conference
2016 74th Annual Device Research Conference (DRC), Newark, DE, USA, 19-22 June 2016
Date
2016
Publisher
New York, IEEE
Other identifier(s)
View record in Web of Science
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Scientific production and competences > STI - School of Engineering > CMI - Center of MicroNanoTechnology
Conference Papers
Work produced at EPFL
Published
Scientific production and competences > STI - School of Engineering > CMI - Center of MicroNanoTechnology
Conference Papers
Work produced at EPFL
Published
Record creation date
2016-10-17