Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications
Casu, Emanuele Andrea; Lopez, Mariazel Maqueda; Vitale, Wolfgang A.; Fernandez-Bolanos, Montserrat; Ionescu, Adrian Mihai
2016

Abstract

A novel fabrication process for the integration of Field Effect Transistors in electrostatically actuated bulk acoustic resonators is demonstrated. ALD-deposited HfO2 is used as a high-k dielectric for the FET and as an etch-stop layer during the release of the resonator structure as well, enabling the creation of sub-100 nm air-gap resonators with FET amplification enhancement.

Details

Title Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications
Author(s) Casu, Emanuele Andrea ; Lopez, Mariazel Maqueda ; Vitale, Wolfgang A. ; Fernandez-Bolanos, Montserrat ; Ionescu, Adrian Mihai
Published in 2016 IEEE Silicon Nanoelectronics Workshop (SNW)
Pagination 2
Pages 70-71
Conference 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016
Date 2016
Publisher New York, IEEE
DOI https://doi.org/10.1109/SNW.2016.7577989
Other identifier(s) View record in Web of Science
Laboratories NANOLAB
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Conference Papers
Work produced at EPFL
Published
Record creation date 2016-10-14

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