000220861 001__ 220861
000220861 005__ 20180913063829.0
000220861 020__ $$a0-7803-8557-8
000220861 037__ $$aCONF
000220861 245__ $$aLow-voltage surface-normal InGaAsP/InP modulator for optical interconnects
000220861 269__ $$a2004
000220861 260__ $$bIEEE$$c2004
000220861 336__ $$aConference Papers
000220861 490__ $$aIEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting
000220861 500__ $$a17th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, Rio Grande, PR, NOV 07-11, 2004
000220861 520__ $$aWe present a quasi-waveguide angled facet electroabsorption modulator with a contrast ratio greater than 3 dB between 1496 nm and 1506 nm for 1 V drive as well as a misalignment tolerance of 30 mum.
000220861 700__ $$aHelman, NC
000220861 700__ $$aRoth, JE
000220861 700__ $$aAltug, H
000220861 700__ $$aMiller, DAB
000220861 700__ $$aBour, DP
000220861 7112_ $$a2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2$$c345 E 47TH ST, NEW YORK, NY 10017 USA
000220861 773__ $$q461-462$$t2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2
000220861 909C0 $$0252567$$pBIOS$$xU12650
000220861 909CO $$ooai:infoscience.tind.io:220861$$pconf$$pSTI
000220861 937__ $$aEPFL-CONF-220861
000220861 970__ $$ahelman_low-voltage_2004/BIOS
000220861 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000220861 980__ $$aCONF