Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects
Helman, NC; Roth, JE; Altug, H; Miller, DAB; Bour, DP
2004

Abstract

We present a quasi-waveguide angled facet electroabsorption modulator with a contrast ratio greater than 3 dB between 1496 nm and 1506 nm for 1 V drive as well as a misalignment tolerance of 30 mum.

Details

Title Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects
Author(s) Helman, NC ; Roth, JE ; Altug, H ; Miller, DAB ; Bour, DP
Published in The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004
Series IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting
Volume 2
Pages 461-462
Conference 17th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, Rio Grande, PR, NOV 07-11, 2004
Date 2004
Publisher IEEE
ISBN 0-7803-8557-8
DOI https://doi.org/10.1109/LEOS.2004.1363312
Laboratories BIOS
Record Appears in Scientific production and competences > STI - School of Engineering > IBI-STI - Interfaculty Institute of Bioengineering > BIOS - Bionanophotonic Systems Laboratory
Peer-reviewed publications
Work outside EPFL
Conference Papers
Published
Record creation date 2016-08-16

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