Single field effect transistor capacitor-less memory device and method of operating the same

A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transistor and a base. The device further includes a fin structure comprising the source region, the intrinsic channel and the drain region, the fin structure extending outwardly from the base, and a double gate comprising a first gate connected to a first exposed lateral face of the intrinsic channel region for transistor control, and a second gate connected to a second exposed lateral face of the intrinsic channel region to generate a potential well for storing mobile charge carriers permitting memory operation, the first gate and the second gate being asymmetric for asymmetric electrostatic control of the device.


Year:
2016
Publisher:
Technology Transfer Office EPFL
Keywords:
Other identifiers:
EPO Family ID: 53400994
Laboratories:




 Record created 2016-07-19, last modified 2018-03-17

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