InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n(+)-type GaN layer deposited on top of the structure. The low sheet resistance of the n(+)-GaN layer ensures excellent lateral current spreading, while carrier injection is confined all along the ridge thanks to current tunneling at the interface between the n(+)-GaN top layer and the p(++)-GaN layer. Continuous-wave lasing at 400nm with an output power of 100mW is demonstrated on uncoated facet devices with a threshold current density of 2.4 kA.cm(-2). (C) 2016 The Japan Society of Applied Physics


Published in:
Applied Physics Express, 9, 6, 061004
Year:
2016
Publisher:
Bristol, Iop Publishing Ltd
ISSN:
1882-0778
Laboratories:




 Record created 2016-07-19, last modified 2018-03-17


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