Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics

While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.


Published in:
ACS Applied Materials and Interfaces, 15169-15176
Year:
2016
Publisher:
Washington, Amer Chemical Soc
ISSN:
1944-8244
Keywords:
Note:
IMT-NE Number : 876
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2016-07-06, last modified 2018-03-17

n/a:
johlin-2016-ami Nanohole structuring of asih solar cells supporting info... - Download fulltextPDF
johlin-2016-ami Nanohole structuring of asih solar cells - Download fulltextPDF
Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)