An extensive parameter analysis is performed on the electron-hole bilayer tunnel field-effect transistor (EHBTFET) using a 1-D effective mass Schrodinger-Poisson solver with corrections for band non-parabolicity considering thin InAs, In0.53Ga0.47As, Ge, Si0.5Ge0.5, and Si films. It is found that depending on the channel material and channel thickness, the EHBTFET can operate either as a 2-D-2-D or 3-D-3-D tunneling device. InAs offers the highest I-ON, whereas for the Si and Si0.5Ge0.5 EHBTFETs, significant current levels cannot be achieved within a reasonable voltage range. The general trends are explained through an analytical model that shows close agreement with the numerical results.