Nitride-based electron devices for high-power/high-frequency applications

Progress in the development of III-nitride materials has made possible the fabrication of many different types of electron devices. This chapter describes the main advantages of GaN-based electronics as well as some of the main electronic devices developed with this material system. We introduce the key material properties and figures of merit that make III-nitride materials ideal for many high-power/high-frequency applications. Then we focus on the different GaN diode structures developed so far, before discussing GaN bipolar transistors. Finally, we review the state of the art regarding field-effect transistors, both lateral and vertical.


Editor(s):
Gil, Bernard
Published in:
III-Nitride Semiconductors and their Modern Devices
Year:
2013
Publisher:
Oxford University Press
ISBN:
978-0-19968-172-3
Keywords:
Laboratories:




 Record created 2016-05-06, last modified 2018-09-13


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