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research article
Patterned growth of high aspect ratio silicon wire arrays at moderate temperature
High aspect ratio silicon wire arrays with excellent pattern fidelity over wafer-scale area were grown by chemical vapor deposition at moderate temperature, using a gas mixture of silane and hydrogen chloride. An innovative two-step process was developed for in situ doping of silicon wires by diborane. This process led to high p-type doping levels, up to 101810 19 cm-3, without degradation of the silicon wire array pattern fidelity. © 2011 Elsevier B.V. All rights reserved.
Type
research article
Authors
Morin, Christine
•
Kohen, David
•
•
Faucherand, Pascal
•
Levis, Michel
•
Brioude, Arnaud
•
Salem, Bassem
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Baron, Thierry
•
Perraud, Simon
Publication date
2011
Published in
Volume
321
Issue
1
Start page
151
End page
156
Peer reviewed
REVIEWED
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April 22, 2016
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