High aspect ratio silicon wire arrays with excellent pattern fidelity over wafer-scale area were grown by chemical vapor deposition at moderate temperature, using a gas mixture of silane and hydrogen chloride. An innovative two-step process was developed for in situ doping of silicon wires by diborane. This process led to high p-type doping levels, up to 101810 19 cm-3, without degradation of the silicon wire array pattern fidelity. © 2011 Elsevier B.V. All rights reserved.