Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron-hole bilayer tunnel field-effect transistor. We show that, analogously to the explicit formula for the tunneling distance that can be easily obtained in the semiclassical framework where the conduction and valence band edges are allowed states, an equivalent analytical expression can be derived in the presence of field-induced quantum confinement for describing the dependence of the tunneling distance on the body thickness and material properties of the channel. This explicit expression accounting for quantum confinement holds valid provided that the potential wells for electrons and holes at the top and bottom of the channel can be approximated by triangular profiles. Analytical predictions are compared to simulation results showing very accurate agreement. (C) 2016 AIP Publishing LLC.

Published in:
Journal Of Applied Physics, 119, 4, 045705
Melville, Amer Inst Physics

 Record created 2016-04-01, last modified 2018-03-17

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