This work explores the impact of cavity thickness, photonic crystal etch depth, and quantum well placement on the extraction efficiency and emission directionality of thin-film InGaN photonic crystal light-emitting diodes (LEDs).
Titre
Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs
Publié dans
2011 Conference On Lasers And Electro-Optics (Cleo)
Pagination
2
Série
Conference on Lasers and Electro-Optics
Présenté à
Conference on Lasers and Electro-Optics (CLEO)
Date
2011
Editeur
New York, Ieee
ISSN
2160-9020
ISBN
978-1-55752-910-7
Date de création de la notice
2016-03-17