Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs
2011
Abstract
This work explores the impact of cavity thickness, photonic crystal etch depth, and quantum well placement on the extraction efficiency and emission directionality of thin-film InGaN photonic crystal light-emitting diodes (LEDs).
Details
Title
Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs
Author(s)
Rangel, Elizabeth ; Matioli, Elison ; Chen, Hung-Tse ; Weisbuch, Claude ; Speck, James S. ; Hu, Evelyn L.
Published in
2011 Conference On Lasers And Electro-Optics (Cleo)
Pagination
2
Series
Conference on Lasers and Electro-Optics
Conference
Conference on Lasers and Electro-Optics (CLEO)
Date
2011
Publisher
New York, Ieee
ISSN
2160-9020
ISBN
978-1-55752-910-7
Laboratories
POWERLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > POWERLAB - Power and Wide-band-gap Electronics Research Laboratory
Peer-reviewed publications
Work outside EPFL
Conference Papers
Published
Peer-reviewed publications
Work outside EPFL
Conference Papers
Published
Record creation date
2016-03-17