Infoscience

Conference paper

Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs

This work explores the impact of cavity thickness, photonic crystal etch depth, and quantum well placement on the extraction efficiency and emission directionality of thin-film InGaN photonic crystal light-emitting diodes (LEDs).

    Reference

    • EPFL-CONF-217437

    Record created on 2016-03-17, modified on 2016-08-09

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