Impact of the Vertical Layer Structure on the Emission Directionality of Thin-Film InGaN Photonic Crystal LEDs

This work explores the impact of cavity thickness, photonic crystal etch depth, and quantum well placement on the extraction efficiency and emission directionality of thin-film InGaN photonic crystal light-emitting diodes (LEDs).


Published in:
2011 Conference On Lasers And Electro-Optics (Cleo)
Presented at:
Conference on Lasers and Electro-Optics (CLEO)
Year:
2011
Publisher:
New York, Ieee
ISSN:
2160-9020
ISBN:
978-1-55752-910-7
Laboratories:




 Record created 2016-03-17, last modified 2018-09-13


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