Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes

This letter explores the impact of quantum well placement and photonic crystal (PhC) etch depth on the emission directionality of thin-film InGaN PhC light-emitting diodes (LEDs). The far-field pattern of 800-nm-thick PhC LEDs is tuned by varying only the etch depth of a surface-patterned hexagonal PhC from 90 to 440 nm. This dependence on etch depth is shown to arise from the preferential excitation of a subset of the allowed guided modes. Selective excitation of the TE(0) and TE(1) modes is utilized to achieve a vertically directional emission pattern comprised of only these two modes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3554417]


Published in:
Applied Physics Letters, 98, 8, 081104
Year:
2011
Publisher:
Melville, Amer Inst Physics
ISSN:
0003-6951
Laboratories:




 Record created 2016-03-17, last modified 2018-09-13


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)