Efficient quantum mechanical simulation of band-to-band tunneling
Alper, Cem; Palestri, Pierpaolo; Padilla, Jose L.; Gnudi, Antonio; Grassi, Roberto; Gnani, Elena; Luisier, Mathieu; Ionescu, Adrian M.
2015

Résumé

In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wave-function (WF) and density of states (DOS) corrections for both charge and BTBT current calculation. Comparison against more advanced full-quantum simulators based on TB and k ·p Hamiltonians is presented as well and indicates very good matching between models for simple tunnel diodes. An initial parameter study of the Electron Hole Bilayer TFET (EHBTFET) indicates the presence of an optimum channel thickness, determined by the interplay between the subband alignment voltage and ON current level. © 2015 IEEE.

Détails

Titre Efficient quantum mechanical simulation of band-to-band tunneling
Auteur(s) Alper, Cem ; Palestri, Pierpaolo ; Padilla, Jose L. ; Gnudi, Antonio ; Grassi, Roberto ; Gnani, Elena ; Luisier, Mathieu ; Ionescu, Adrian M.
Publié dans EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Pages 141-144
Présenté à 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy, 26-28 January 2015
Date 2015
Editeur IEEE
DOI https://doi.org/10.1109/ULIS.2015.7063793
Laboratoires NANOLAB
Le document apparaît dans Production scientifique et compétences > STI - Faculté des sciences et techniques de l'ingénieur > IEM - Institute of Electrical and Micro Engineering > NANOLAB - Laboratoire des dispositifs nanoélectroniques
Papiers de conférence
Travail produit à l'EPFL
Publié
Date de création de la notice 2016-03-01