Conference paper

Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p

In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the real and imaginary branches of the hole dispersion relation is critical in determining the device characteristics. © 2015 IEEE.


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