Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p

In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the real and imaginary branches of the hole dispersion relation is critical in determining the device characteristics. © 2015 IEEE.


Published in:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 273-276
Presented at:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA, 9-11 September 2015
Year:
2015
Publisher:
IEEE
Laboratories:




 Record created 2016-03-01, last modified 2018-03-17


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