Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels

Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nontherrnally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic domain-walls of the ubiquitous ferroelectric Pb(Zr,Ti)O-3 using scanning force microscopy down to a temperature of 4 K. New walls created at 4 K by pressure exhibit similar robust and intrinsic conductivity. Atomic resolution electron energy-loss spectroscopy confirms the conductivity confinement at the wall. This work provides a new concept in "domain-wall nanoelectronics".


Published in:
Nano Letters, 15, 12, 8049-8055
Year:
2015
Publisher:
Washington, Amer Chemical Soc
ISSN:
1530-6984
Keywords:
Laboratories:




 Record created 2016-02-16, last modified 2018-09-13


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)