From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires
III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, and composition are key to the control of their physical properties. In this work, we present how to grow catalyst-free InAs1-xSbx nanowires, which are stacking fault and twin defect-free over several hundreds of nanometers. We evaluate the impact of their crystal phase purity by probing their electrical properties in a transistor-like configuration and by measuring the phonon-plasmon interaction by Raman spectroscopy. We also highlight the importance of high-quality dielectric coating for the reduction of hysteresis in the electrical characteristics of the nanowire transistors. High channel carrier mobilities and reduced hysteresis open the path for high-frequency devices fabricated using In As1-xSbx nanowires.
Keywords: InAs nanowires ; InAsSb ; catalyst-free ; self-catalyzed ; molecular beam epitaxy ; crystal structure ; electronic properties ; surface passivation ; atomic layer deposition ; mobility ; phonon-plasmon interaction
Record created on 2016-02-16, modified on 2016-08-09